Result description
III-V Lab, university of Glasgow and CEA Leti have demonstrated for the first time an heterogeneously integrated resonant tunneling diodes (RTD) and circuits made of a III-V indium-phosphide-arsenide-gallium-aluminum-based RTD structure directly bonded on a silicon wafer and processed to realize complete RTD-based oscillators and circuits. This InP-on-Si RTD technology compatible with RF/photonic integrated transceivers opens the way to millimeter- and sub-millimeter-wave sources and circuits gathering the advantages of InP RTD and silicon technologies for future high capacity wireless data links
Addressing target audiences and expressing needs
Our needs are
- Collaboration
Target audiences
- Research and Technology Organisations
- Academia/ Universities
R&D, Technology and Innovation aspects
Current stage description
Millimetre-wave RTD-on-Si oscillators demonstrated
Result submitted to Horizon Results Platform by COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
